1/7 preliminary data october 2001 STD38NF03L n-channel 30v - 0.011 w - 38a dpak stripfet? mosfet (*) value limited by package internal schematic diagram n typical r ds (on) = 0.011 w n optimized for high switching operations n low threshold drive n add suffix t4 for ordering in tape & reel n gate charge minimized description this power mosfet is the latest development of stmicroelectronics unique single feature size? strip-based process. the resulting transistor shows extremely high packing density for low on-resis- tance, rugged avalance characteristics and less crit- ical alignment steps therefore a remarkable manufacturing reproducibility. applications n high current, high speed switching n motor control, audio amplifiers n dc-dc & dc-ac converters absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d STD38NF03L 30 v < 0.0145 w 38 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20 k w ) 30 v v gs gate- source voltage 16 v i d (*) drain current (continuos) at t c = 25c 38 a i d drain current (continuos) at t c = 100c 27 a i dm ( l ) drain current (pulsed) 152 a p tot total dissipation at t c = 25c 45 w derating factor 0.3 w/c t stg storage temperature C 55 to 175 c t j max. operating junction temperature dpak 1 3
STD38NF03L 2/7 thermal data electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 3.33 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 275 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 16v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs = 10v, i d = 19 a 0.011 0.0145 w v gs = 4.5v, i d = 19 a 0.014 0.0215 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d = 19 a 28 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 1450 pf c oss output capacitance 390 pf c rss reverse transfer capacitance 155 pf
3/7 STD38NF03L electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 15 v, i d = 27.5 a r g = 4.7 w v gs = 4.5 v (see test circuit, figure 3) 25 ns t r rise time 280 ns q g total gate charge v dd = 24v, i d = 55 a, v gs = 4.5v 27 36 nc q gs gate-source charge 11 nc q gd gate-drain charge 12 nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd = 15v, i d = 27.5a, r g =4.7 w, v gs = 4.5v (see test circuit, figure 3) 60 240 ns ns t d(off) t f t c off-voltage rise time fall time cross-over time vclamp =24v, i d =55a r g =4.7 w, v gs = 4.5v (see test circuit, figure 5) 140 200 350 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 38 a i sdm (2) source-drain current (pulsed) 152 a v sd (1) forward on voltage i sd = 38 a, v gs = 0 1.5 v t rr reverse recovery time i sd = 55 a, di/dt = 100a/s v dd = 15v, t j = 150c (see test circuit, figure 5) 45 ns q rr reverse recovery charge 52 nc i rrm reverse recovery current 2.3 a
STD38NF03L 4/7 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
5/7 STD38NF03L dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
STD38NF03L 6/7 tape and reel shipment (suffix t4)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
7/7 STD38NF03L information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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